inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2449 description collector-emitter breakdown voltage- : v (br)ceo = 160v(min) high dc current gain- : h fe = 3000( min.) @(i c = 8a, v ce = 5v) low collector saturation voltage- : v ce(sat) = 3.0v(max)@ (i c = 8a, i b = 8ma) b complement to type 2sb1594 applications designed for power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 160 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 5 v i c collector current-continuous 10 a i b b base current-continuous 1 a p c collector power dissipation @t c =25 150 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD2449 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma ; i b = 0 160 v v ce (sat) collector-emitter saturation voltage i c = 8a; i b = 8ma b 3.0 v v be (on) base-emitter on voltage i c = 8a; v ce = 5v 3.0 v i cbo collector cutoff current v cb = 160v; i e = 0 100 a i ceo collector cutoff current v ce = 160v; i b = 0 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 100 a h fe-1 dc current gain i c = 8a; v ce = 5v 3000 20000 h fe-2 dc current gain i c = 12a; v ce = 5v 2000 f t current-gain?bandwidth product i c = 1a; v ce = 5v 30 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 150 pf ? h fe- 1 classifications a b c 3000-10000 5000-15000 7000-20000 isc website www.iscsemi.cn 2
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